Plasma cleaning apparatus and method

ABSTRACT

Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. The apparatus can include a lid body having a first surface for facing a pedestal during cleaning and a second surface opposite the first surface and substantially parallel to the first surface, the second surface having a first indentation sized to receive a magnet assembly, one or more handles coupled to the second surface of the lid body, and the magnet assembly resting in the first indentation. The method can include removing a sputtering target from the processing chamber, sealing the processing chamber, introducing a gas into the processing chamber, applying an RF bias to a pedestal within the processing chamber, maintaining the pedestal at a substantially constant temperature, and removing material from the pedestal to clean the pedestal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Patent ApplicationSer. No. 61/107,916, filed Oct. 23, 2008, and benefit of U.S.Nonprovisional patent application Ser. No. 12/582,905, filed Oct. 21,2009, and issued as U.S. Pat. No. 8,721,796 on May 13, 2014. Bothapplications are herein incorporated by reference.

BACKGROUND OF THE INVENTION

Field of the Invention

Embodiments of the present invention generally relate to a plasmacleaning apparatus and method.

Description of the Related Art

Physical vapor deposition (PVD) is a method of depositing a materialonto a substrate. A PVD apparatus may have a sputtering target disposedwithin a processing chamber and situated opposite a substrate. Asputtering gas, such as argon, is introduced into the chamber. Thesputtering target, when metallic, may be electrically biased with a DCcurrent to ignite the argon gas into a plasma. The substrate, on theother hand, may be grounded to act as an anode relative to theelectrically biased sputtering target. Atoms from the sputtering targetmay eject or sputter from the sputtering target and deposit on thesubstrate.

While the atoms from the sputtering target may deposit onto thesubstrate, the atoms may also deposit on exposed surfaces within thechamber. For example, material may be deposited on the chamber walls.Over time, the material deposited onto the chamber walls may build up toa sufficient thickness that the chamber needs to be cleaned.Additionally, material deposited onto the walls may flake off and landon other areas of the chamber.

When a substrate is inserted or removed from the chamber, opening andclosing of a slit valve may cause material to flake off and deposit onundesired surfaces such as the susceptor. When material accumulates ontothe susceptor, the susceptor may not function effectively. Thus, theprocessing chamber may periodically need to be cleaned to removeundesired material deposits.

Additionally, dielectric material may be deposited onto the substrate inother chambers. Whenever the chamber is opened to permit a substrate toenter and/or exit the chamber, dielectric material may enter into thechamber. The dielectric material may be present in the other chamber andflow into the chamber where it may condense on the chamber surfaces,including the susceptor. If the susceptor is an electrostatic chuck andsufficient dielectric material builds up on the susceptor, theelectrostatic charge of the susceptor, when biased, may be shielded bythe dielectric material and prevent the substrate from being attractedto the susceptor. If there is sufficient dielectric material built up onthe susceptor, the substrate may pop off of the susceptor due toinsufficient electrostatic charge, possibly resulting in damage to thesubstrate and/or chamber components.

Therefore, there is a need in the art for an apparatus and a method toclean a processing chamber.

SUMMARY OF THE INVENTION

Embodiments of the present invention generally include an apparatus forplasma cleaning and a method for plasma cleaning. Periodically, a PVDchamber may need to be cleaned to remove material that has built up inundesired locations within the chamber. Additionally, the sputteringtarget may need to be replaced. By removing the sputtering target andplacing a grounded chamber lid in its place, the chamber may be plasmacleaned. The susceptor within the chamber may be electrically biasedwith an RF current. A stationary magnet assembly may be substantiallycentered behind the grounded lid to focus the cleaning plasma on thesusceptor. Following the plasma cleaning, the magnet and lid may beremoved and the sputtering target may be coupled to the chamber tocontinue processing.

In one embodiment, an apparatus includes a chamber body having a baseand a plurality of sidewalls coupled to ground, a first chamber lidassembly coupled to the chamber body, and a second chamber lid assemblyseparate from the first chamber lid assembly and resting on the chamberbody. The first chamber lid assembly may comprise an electrode, amagnetron assembly positioned behind the sputtering target, and a firstlid enclosing the magnetron assembly. The second chamber lid assemblymay comprise a second lid having a first surface for facing the base anda second surface disposed opposite the first surface. The second chamberlid assembly may also have a magnet assembly having one or more magnetstherein. The magnet assembly rests on the second surface of the secondlid.

In another embodiment, an apparatus includes a chamber body having abase and a plurality of grounded sidewalls and a first lid disposedopposite the base and in contact with the plurality of sidewalls toenclose a processing area. The first lid has a first surface facing thebase and a second surface opposite the first surface. The first lid iselectrically coupled to the chamber body. The apparatus also includes asecond lid assembly pivotably coupled to the chamber body and having asputtering target, a magnetron assembly positioned behind the sputteringtarget, a second lid enclosing the magnetron assembly, and a covercoupled with the second lid to enclose the magnetron assembly andsputtering target. The apparatus also includes a susceptor disposedwithin the processing area. The susceptor is coupled to and extends fromthe base. The apparatus also includes one or more magnet assembliescoupled to the second surface of the lid. The one or more magnetassemblies are substantially centered over the susceptor.

In another embodiment, a method of servicing a processing chamber isdisclosed. The method includes pivoting a first lid from the processingchamber to expose a processing space. The processing chamber has a baseand a plurality of grounded chamber walls that enclose the processingspace. The method also includes placing a second lid, separate from thefirst lid, into contact with the plurality of grounded chamber walls tore-enclose the processing space. The method additional may includeplacing a magnet assembly on a surface of the second lid opposite to theprocessing space and applying an RF current to a susceptor disposed inthe processing space.

In another embodiment, a method for cleaning a processing chamber isdisclosed. The method includes removing a sputtering target from theprocessing chamber and sealing the processing chamber. The method alsoincludes introducing a gas into the processing chamber and applying anRF bias to a pedestal within the processing chamber. The method alsoincludes maintaining the pedestal at a substantially constanttemperature and removing material from the pedestal to clean thepedestal.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a schematic cross sectional view of a PVD apparatus 100according to one embodiment of the invention.

FIG. 2 is a schematic cross sectional view of a PVD apparatus 200according to another embodiment of the invention.

FIG. 3A is a schematic cross sectional view of a magnet assemblyaccording to one embodiment of the invention.

FIG. 3B is a schematic isometric view of the magnet assembly of FIG. 3A.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Embodiments of the present invention generally include an apparatus forplasma cleaning and a method for plasma cleaning. Periodically, a PVDchamber may need to be cleaned to remove material that has built up inundesired locations within the chamber. Additionally, the sputteringtarget may need to be replaced. By removing the sputtering target andplacing a grounded chamber lid in its place, the chamber may be plasmacleaned. The susceptor within the chamber may be electrically biasedwith an RF current. A stationary magnet assembly may be substantiallycentered behind the grounded lid to focus the cleaning plasma on thesusceptor. Following the plasma cleaning, the magnet and lid may beremoved and the sputtering target may be coupled to the chamber tocontinue processing.

Embodiments of the invention will be discussed herein with reference toa PVD chamber. A suitable PVD chamber that may be used to practice theinvention is the ENDURA® Aluminum PVD chamber available from AppliedMaterials, Inc., Santa Clara, Calif. It is to be understood that otherchambers may be used, including those sold by other manufacturers.

FIG. 1 is a schematic cross sectional view of a PVD apparatus 100according to one embodiment of the invention. The apparatus 100 includesa chamber body having a chamber bottom 102 and a plurality of chamberwalls 104. One or more slit valve openings 106 may be present throughone or more chamber walls 104. The slit valve opening 106 permits asubstrate 112 to enter and exit the apparatus 100. The apparatus 100 maybe evacuated by a vacuum pump 108. Processing gas may be introduced intothe apparatus 100 from a gas supply 110.

The substrate 112 may rest on a susceptor 116 opposite to a sputteringtarget 114. In one embodiment, the susceptor 116 may comprise a ceramicmaterial. The susceptor 116 may have an electrode 120 embedded thereinthat is coupled to a DC power source 126 to act as an anode inopposition to the sputtering target 114 that is electrically biased by aDC power source 148 and functions as a cathode. In one embodiment, thesusceptor 116 may simply be coupled to ground. The susceptor 116 may besupported by a susceptor base 122 and raised and lowered by a shaft 124.The shaft 124 and susceptor base 122 may raise the susceptor 116 toretrieve a substrate 112 that enters the apparatus 100. Additionally,the shaft 124 and susceptor base 122 may raise the susceptor 116 to aprocessing position. A waste ring 118 may circumscribe the susceptor 116to prevent unwanted deposition. An RF power source 128 may also becoupled to the susceptor 116.

When a substrate 112 is inserted into the apparatus 100 through the slitvalve opening 106, the substrate 112 is initially disposed onto liftpins 134. The lift pins 134 may be disposed on a platform 136 and raisedand lowered by a shaft 138. The lift pins 134 may be raised up throughopenings 140 in the susceptor 112 to receive the substrate 112.Thereafter, the susceptor 112 may be raised by the shaft 124 to comeinto contact with the substrate 112. Alternatively, the platform 136 andlift pins 134 may be lowered to lower the substrate 112 onto thesusceptor 116. In one embodiment, a combination of raising the susceptor116 and lowering the lift pins 134 and platform 136 may occur to placethe substrate 112 onto the susceptor 116.

The substrate 112, after being placed onto the susceptor 116, may beraised to a processing position for material to be deposited thereon.While the substrate 112 is raised, the susceptor 116 encounters a coverring 130 that may be used to cover portions of the susceptor 116 andwaste ring 118 where deposition is undesirable. Additionally, the coverring 130 may reduce the amount of processing gas that flows below thesusceptor 116 that may deposit on undesired locations. The cover ring130 will be supported by the susceptor 116 when in the processingposition. When the susceptor 116 is lowered, the cover ring 130 may reston a ledge 132 that is disposed in the apparatus 100 above the slitvalve opening 106.

The sputtering target 114 may be electrically biased with DC power froma power source 148. The sputtering target 114 may be bonded to a backingplate 142. In one embodiment, the power source 148 may be coupled to thebacking plate 142 which couples the power to the sputtering target 114.In one embodiment, the sputtering target 114 may comprise a metal. Inanother embodiment, the sputtering target 114 may comprise aluminum,copper, titanium, tantalum, silver, molybdenum, magnesium, orcombinations thereof. In one embodiment, the backing plate 142 maycomprise a material having the same electrical conductivity as thesputtering target 114. In another embodiment, the backing plate 142 maycomprise a metal. In another embodiment, the backing plate 142 maycomprise aluminum, copper, titanium, tantalum, silver, molybdenum,magnesium, or combinations thereof.

The backing plate 142, and hence, the sputtering target 114, may beelectrically insulated from the chamber walls 104 by an electricallyinsulating material. In the embodiment shown in FIG. 1, the backingplate 114 is spaced from the chamber walls 104 by an electricallyinsulating O-ring 146.

A magnet assembly may be disposed behind the sputtering target. Themagnet assembly in FIG. 1 has a magnetic yoke 152 with a plurality ofpermanent magnets 154 coupled thereto. In another embodiment, the magnetassembly may comprise electromagnets. In the embodiment shown in FIG. 1,the magnet assembly may rotate about the center axis 156 of thesubstrate 112, target 114, and backing plate 142. The magnet assemblyproduces a magnetic field 158 that may increase the useful life of thesputtering target 114 by increasing the uniformity of the sputteringtarget 114 erosion.

The magnet assembly is enclosed between the backing plate 142 and achamber lid 150 in FIG. 1. The chamber lid 150 may be coupled to thechamber walls 104 and thus be electrically grounded. However, thechamber lid 150 is electrically isolated from the electrically biasedbacking plate 142 and/or sputtering target 114. In the embodiment shownin FIG. 1, the lid 150 is electrically insulated from the backing plate142 by an insulator 144.

During the sputtering process, material from the sputtering target 114may deposit onto the substrate 112 and any surfaces exposed to thesputtered particles such as the chamber walls 104, the cover ring 130,the ledge 132, and even the susceptor 116. The material may deposit ontothe susceptor 116 due to material flaking from the walls 104.Additionally, if the substrate 112 is not flat against the susceptor 116due to susceptor 116 warping, substrate 112 warping, or material flakesdeposited onto the susceptor 116, a gap may be present between thesubstrate 112 and the susceptor 116 such that material may enter the gapand deposit on the susceptor 116. The susceptor 116, if materialdeposits thereon, may not function effectively. Thus, the susceptor 116may be periodically cleaned.

Additionally, material from other processing chambers may enter into thechamber body when substrates are inserted or removed. If the material isa dielectric material, the dielectric material may deposit onto thesusceptor 116 which may lead to shielding of the electrostatic charge onthe substrate 112. Thus, the substrate 112 may pop off of the susceptor116 if too much dielectric material deposited onto the susceptor 116.Thus, the susceptor 116 may be periodically cleaned.

FIG. 2 is a schematic cross sectional view of a PVD apparatus 200according to another embodiment of the invention. The apparatus 200comprises a first lid assembly 202 having a lid 204, enclosing a magnetassembly 210 between the lid 204 and a backing plate 206. A sputteringtarget 208 may be bonded to the backing plate 206. The first lidassembly 202 is shown pivoted away from the processing chamber 246 on ahinge 214. Thus, the first lid assembly 202 is still coupled with thechamber 246. A cover 212 may be placed over the sputtering target 208for safety to prevent any exposure of the sputtering target 208, whichwould be an electrode, should any technician accidentally turn on the DCpower to the sputtering target 208. In one embodiment, the cover 212 maycomprise a dielectric material.

The lid assembly 202 may be pivoted away from the chamber 246 to performroutine maintenance, target replacement, and other processes such aschamber 246 cleaning. To clean the chamber 246, a second lid assembly216 may be coupled to the chamber 246. The second lid assembly 216comprises a lid 218 having one or more handles 220 to permit the lid 218to be easily coupled to and removed from the chamber 246. It is to beunderstood that while two handles 220 have been shown, more or lesshandles 220 may be present. Additionally, while handles 220 are shown,it is to be understood that other elements may be used that can providethe same function of permitting a technician to couple the lid 218 to orremove the lid 218 from the chamber 246. In one embodiment, the lid 218may comprise the same material as the chamber walls 250. The lid 218 maybe coupled with the chamber 246 by one or more O-rings 234 to permit thechamber 246 sealed by the lid 218 to be evacuated. Additionally, the lid218 may be grounded to the chamber 246 by a strap 244 that couples tothe lid 218 and one or more chamber walls 250. While not shown, one ormore clamps may be present to clamp the lid 218 to the chamber walls 250to ensure a good vacuum seal, however, it is contemplated that the lid218 may be coupled to the chamber walls 250 by placing the lid 218thereon and evacuating the chamber 246 such that the vacuum levelcompresses the O-ring 234 between the walls 250 and the lid 218 andseals the chamber 246.

The lid 218 has a back surface 230 that faces atmosphere when thechamber 246 is evacuated. The back surface 230 may have an indentation232 therein to permit a magnet assembly 222 to be placed snugglytherein. The indentation 232 in the lid 218 is sized to match theoutside diameter of the magnet assembly 222 and is a visual indicatorfor a technician when installing the magnet assembly 222.

The magnet assembly 222 may comprise a magnet body 226 having one ormore magnets 238 disposed therein. The magnet assembly 222 may have oneor more handles 224 to permit a technician to place the magnet assembly222 in the indentation 232 and remove the magnet assembly 222 from theindentation 232. It is to be understood that while one handle 224 hasbeen shown for the magnet assembly 222, more handles 224 may be present.Additionally, while a handle 224 is shown, it is to be understood thatother elements may be used that can provide the same function ofpermitting a technician to place the magnet assembly 222 in theindentation 232 or remove the magnet assembly 222 from the indentation.In one embodiment, the magnet assembly 222 rests in the indentation 232.In another embodiment, the magnet assembly 222 is fastened to theindentation 232. It is to be understood that the indentation 232 neednot be present to couple the magnet assembly 222 to the lid 218. Forexample, the magnet assembly 222 may simply be placed on a center areaof the lid 218. Alternatively, the magnet assembly 222 may be fastenedto the lid 218.

During a cleaning process, the susceptor 236 may be electrically biasedwith an RF current from a power source 238 and cleaning gas isintroduced into the chamber 246 from a gas source. The RF currentapplied to the ceramic susceptor 236 generates a plasma within thechamber 246. The magnetic field 242 generated by the magnet assembly 222may confine a portion of the plasma within an area 240 near the centerof the susceptor 236. The plasma sputter etches the susceptor 236 toremove undesired material. Additionally, other chamber 246 componentsmay be cleaned. Thus, the higher density of plasma near the center ofthe susceptor 236 due to the magnet assembly 222 may accommodateenhanced cleaning of the susceptor 236. If the lid assembly 202 wereleft in place for the cleaning and electrically grounded, the magnetassembly 210, which rotates about the center axis 248 of the susceptor236, would generate a magnetic field away from the center of thesusceptor 236 such that the susceptor 236 may not be effectivelycleaned. It has been surprisingly found that when using a magnetassembly 222 centering the magnetic field 242 over the susceptor 236 ascompared to a magnet assembly 210 that rotates about the center axis248, the susceptor cleaning time may be cut in half. By cutting thecleaning time, the chamber 246 downtime may be reduced. Thus, systemutilization and substrate throughput may be increased by using themagnet assembly 222 and lid assembly 216 for cleaning rather than agrounded lid assembly 202 having the magnet assembly 210 used forsputter deposition.

The magnet assembly 222 shown in FIG. 2 is stationary and does notrotate. It is to be understood that other magnet assemblies arepossible. For example, a magnet assembly centered on the center axis 248that rotates about its center axis 248 may be used. In one embodiment,multiple magnet assemblies may be used such that one magnet assembly hasthe same center axis 248 as the susceptor and the other magnetassemblies rotate about the center axis 247. Additionally, whilepermanent magnets 228 are shown, it is contemplated that electromagnetsmay be used in addition to or instead of permanent magnets 228.

After the plasma cleaning process, the second lid assembly 216 may beremoved and the cover 212 may be removed from the first lid assembly202. The first lid assembly 202 may then be pivoted back into positionto enclose the processing chamber 246. Thereafter, regular processingmay continue on substrates.

FIG. 3A is a schematic cross sectional view of a magnet assembly 300according to one embodiment of the invention. FIG. 3B is a schematicisometric view of the magnet assembly 300 of FIG. 3A. The magnetassembly 300 includes a body 302 for holding the magnets 310 and 312 ofthe magnet assembly 300. A lid 304 may be coupled against the body 302to seal the magnets 310 and 312 in the body 302. In one embodiment, thebody 302 has a slot therein for each magnet 310 and 312 to be used inthe magnet assembly 300. The lid 304 may be fastened to the body 302with one or more fastening mechanisms 304. In one embodiment, thefastening mechanism 304 may comprise a screw that is received in anopening 316 formed in the body 302. One or more handles 308 may bepresent for removing the lid 304 from the body 302. Additionally, thehandle 308 may be used to place on or remove the magnet assembly 300from the cleaning lid. It is to be understood that while one handle 308has been shown for the magnet assembly 300, more handles 308 may bepresent. Additionally, while a handle 308 is shown, it is to beunderstood that other elements may be used that can provide the samefunction of permitting a technician to place the magnet assembly 300 onor remove the magnet assembly 300 from the cleaning lid.

In the embodiment shown in FIGS. 3A and 3B, twelve magnets 310 are shownsurrounding a center magnet 312. The twelve magnets 310 and the centermagnet 312 are shown to be flush with the upper surface 314 of the body.However, it is contemplated that the magnets 310 and 312 may extend to aheight below the surface 314 of the body. The twelve magnets 310 are ofthe same polarity facing the lid 304 and opposite the polarity of thecenter magnet 312 facing the lid 304. The twelve magnets 310 facing thesurface 218 opposite the lid 304 are opposite the polarity of the centermagnet 312 facing the surface 318 opposite the lid 304. It is to beunderstood that while the magnet assembly 300 is shown having themagnets 310 and 312 within slots formed in the body 302 that are openfacing the lid 304 having the handle 308, the slots may be formed withinthe surface 318 and a lid may be placed over the magnets insertedtherein.

It is to be understood that while twelve magnets 310 are shownsurrounding a single center magnet 312, other magnet configurations arecontemplated. For example, more or less magnets 310 may be present.Additionally, more or less center magnets 312 may be present.Electromagnets may also be used in conjunction with or alternatively tothe permanent magnets shown in FIGS. 3A and 3B.

As shown in FIG. 3A, the outer magnets 310 have substantially the samediameter as shown by arrows “A” which is less than the width of thecenter magnet 312 as shown by arrows “B”. As may be seen in FIG. 3B, theouter magnets 310 may be substantially circular while the center magnet312 may be oval. As shown in FIGS. 3A and 3B, the center magnet 312 mayhave multiple different widths shown by arrows “B” and “C” due to itsoval shape. It is to be understood that while circular magnets 310 andan oval magnet 312 have been shown, other shapes are contemplated. Forexample, the center magnet 312 may be circular.

To perform the cleaning process, the second lid assembly with thestationary magnet arrangement is sealed to the processing chamber andthe processing chamber is evacuated. During the cleaning process, theprocessing chamber will be maintained at a chamber pressure of betweenabout 1 mTorr to about 15 mTorr. In one embodiment, the chamber pressureis between about 2 mTorr to about 7 mTorr. In another embodiment, thechamber pressure is between about 3 mTorr and about 7 mTorr. Thecleaning gas is introduced to the processing chamber. In one embodiment,the cleaning gas may comprise an oxygen containing gas. In anotherembodiment, the cleaning gas may comprise oxygen. In another embodiment,the cleaning gas may comprise ozone. In another embodiment, the cleaninggas may comprise an inert gas. In another embodiment, the cleaning gasmay comprise argon. In another embodiment, the cleaning gas may comprisea mixture of argon and hydrogen.

The cleaning gas may be provided to the processing chamber at a flowrate of between about 6.67 sccm/L to about 200 sccm/L. In anotherembodiment, the cleaning gas may be provided at a flow rate of betweenabout 8 sccm/L to about 150 sccm/L. In another embodiment, the cleaninggas may be provided at a flow rate of between about 20 sccm/L to about80 sccm/L. In another embodiment, the cleaning gas may be provided at aflow rate of between about 16.67 sccm/L and about 66.67 sccm/L. Inanother embodiment, the cleaning gas may be provided at a flow rate ofbetween about 24 sccm/L to about 50 sccm/L. During the cleaning, RFpower is provided to the pedestal. In one embodiment, the RF powerprovided may be about 13.56 MHz at a power of about 0.4 W/cm² to about4.0 W/cm². In general, the temperature for cleaning may be between aboutroom temperature and about 100 degrees Celsius. In another embodiment,the temperature for cleaning may be between about 25 degrees Celsius andabout 90 degrees Celsius. In another embodiment, the temperature forcleaning may be between about 35 degrees Celsius and about 50 degreesCelsius.

In one embodiment, the pedestal may be maintained at a temperature ofbetween about 90 degrees Celsius and about 110 degrees Celsius, argonand hydrogen may be introduced at a flow rate of between about 20 sccm/Land about 25 sccm/L for a time period of between about 5 seconds andabout 10 seconds while no power is applied to the pedestal for a firststep. The pedestal may have a diameter of about 300 mm, and the chambermay have a volume of between about 1 liter and about 3 liters. Then,only argon is introduced for a time period of about 5 seconds to about10 seconds at a rate of between about 200 sccm/L and about 210 sccm/Lwhile no power is applied for the second step. Then, only argon isintroduced in a third step at a flow rate of between about 200 sccm/Land about 210 sccm/L for a time period of between about 10 seconds andabout 15 seconds while power is delivered to the pedestal at about 0.4W/cm² to about 4.0 W/cm². Then, in a fourth step, only argon isintroduced at a rate of between about 150 sccm/L and about 160 sccm/Lfor about 180 seconds to about 190 seconds while about 0.4 W/cm² toabout 4.0 W/cm² of power is delivered to the pedestal. Finally, in afifth step, only argon is introduced at a rate of between about 50sccm/L to about 60 sccm/L for about 180 seconds to about 190 secondswhile about 0.4 W/cm² to about 4.0 W/cm² of power is delivered to thepedestal. Then, the chamber remains idle for about 5 minutes and steps1-5 are repeated.

In another embodiment, the pedestal may be maintained at between about25 degrees Celsius to about 100 degrees Celsius, argon may be introducedat a flow rate of between about 80 sccm/L and about 100 sccm/L for about5 seconds to about 10 seconds while no power is applied to the pedestalfor a first step. The pedestal may have a diameter of about 300 mm, andthe chamber may have a volume of between about 1 liter and about 3liters. Then, argon is introduced for about 5 seconds to about 10seconds at a rate of about 80 sccm/L to about 100 sccm/L while about 0.4W/cm² to about 4.0 W/cm² of power is applied for the second step. Then,argon is introduced in a third step at a rate of about 24 sccm/L toabout 30 sccm/L for about 8000 seconds to about 8500 seconds while about0.4 W/cm² to about 4.0 W/cm² of power is delivered to the pedestal.Then, the chamber remains idle for about 1 minutes and steps 1-3 may berepeated if necessary.

In another embodiment, the cleaning process may occur with a constantargon flow rate of about 200 sccm/L and a pressure of about 3 mTorr. Inanother embodiment, the cleaning process may occur with a constant argonflow rate of about 150 sccm/L and a chamber pressure of about 2 mTorr.In another embodiment, the cleaning process may occur at a constantargon flow rate of about 80 sccm/L and a pressure of about 15 mTorr. Inanother embodiment, the cleaning process may occur at a constant argonflow rate of about 24 sccm/L and a pressure of about 6 mTorr.

By utilizing the above cleaning parameters, the chamber cleaning processmay last about 10 hours. Prior to utilizing the above conditions andhardware, the cleaning process would take about 20 hours and beperformed about every 2 weeks. Thus, the above cleaning parameters andhardware significantly reduce chamber downtime and increase substratethroughput. The cleaning process involves removing undesiredcontaminates from the processing chamber that has deposited on one ormore walls of the processing chamber and any other exposed surfaces.

By replacing the sputtering lid with a grounded chamber lid and a magnetassembly centered on the center axis of the susceptor, the susceptor maybe effectively cleaned during a plasma cleaning process. The magnetassembly centered about the center axis of the susceptor confines ahigher density plasma near the center of the susceptor as compared tothe rotating sputter magnet assembly that rotates about the center axis.Thus, the grounded lid assembly separate from the sputtering lidassembly may reduce chamber cleaning times and increase substratethroughput.

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

The invention claimed is:
 1. A method for cleaning a processing chamber,comprising: removing a sputtering target from the processing chamber;sealing the processing chamber; introducing a gas into the processingchamber; applying an RF bias to a pedestal within the processingchamber; maintaining the pedestal at a substantially constanttemperature; and removing material from the pedestal to clean thepedestal.
 2. The method of claim 1, wherein the gas is selected from thegroup consisting of argon, hydrogen, oxygen containing gas andcombinations thereof.
 3. The method of claim 2, wherein the processingchamber is maintained at a pressure of between about 1 mTorr and about15 mTorr.
 4. The method of claim 3, wherein the gas is argon, thesubstantially constant temperature is between about 25 degrees Celsiusand about 100 degrees Celsius, and the RF bias is between about 0.4W/cm² to about 4.0 W/cm².
 5. The method of claim 4, wherein the methodis performed for a time period of between about 8000 seconds and about8500 seconds.
 6. A method for cleaning a processing chamber, comprising:removing a sputtering target from the processing chamber; sealing theprocessing chamber; introducing a gas into the processing chamber;applying an RF bias to a pedestal within the processing chamber;maintaining the pedestal at a substantially constant temperature;cleaning the processing chamber for a first period of time of betweenabout 5 seconds to about 10 seconds while maintaining the pedestal at atemperature of between about 25 degrees Celsius to about 100 degreesCelsius and flowing argon at a flow rate of between about 80 sccm/L andabout 100 sccm/L to remove material from the pedestal; cleaning theprocessing chamber for a second period of time of between about 5seconds to about 10 seconds while argon is flowed at a rate of about 80sccm/L to about 100 sccm/L and about 0.4 W/cm² to about 4.0 W/cm² ofpower is applied to the pedestal to remove material from the pedestal;and cleaning the processing chamber for a third period of time ofbetween about 8000 seconds and about 8500 seconds while argon isintroduced at a flow rate of about 24 sccm/L to about 30 sccm/L andwhile about 0.4 W/cm² to about 4.0 W/cm² of power is delivered to thepedestal to remove material from the pedestal.
 7. The method of claim 6,further comprising repeating the cleaning of the processing chamber forthe first period of time, second period of time and third period oftime.
 8. The method of claim 7, further comprising permitting thechamber to remain idle for a period of time of about 4 minutes to about6 minutes prior to the repeating.
 9. The method of claim 8, wherein thesealing the processing chamber comprises placing a lid onto the chamberand placing a stationary magnet assembly on a surface of the lid.
 10. Amethod for cleaning a processing chamber, comprising: removing asputtering target from the processing chamber; sealing the processingchamber; introducing a gas into the processing chamber; applying an RFbias to a pedestal within the processing chamber; maintaining thepedestal at a substantially constant temperature; cleaning theprocessing chamber for a first period of time of between about 5 secondsand about 10 seconds while maintaining the pedestal at a temperature ofbetween about 90 degrees Celsius and about 110 degrees Celsius and whileintroducing argon and hydrogen at a flow rate of between about 20 sccm/Land about 25 sccm/L to remove material from the pedestal; cleaning theprocessing chamber for a second period of time of between about 5seconds and about 10 seconds while maintaining the pedestal at atemperature of between about 90 degrees Celsius and about 110 degreesCelsius and while introducing argon to the chamber at a flow rate ofbetween about 190 sccm/L to about 210 sccm/L to remove material from thepedestal; cleaning the processing chamber for a third period of time ofbetween about 10 seconds and about 15 seconds while maintaining thepedestal at a temperature of between about 90 degrees Celsius and about110 degrees Celsius and while introducing argon at a flow rate ofbetween about 200 sccm/L and about 210 sccm/L for a time period ofbetween about 10 seconds and about 15 seconds and while power isdelivered to the pedestal at about 0.4 W/cm² to about 4.0 W/cm² toremove material from the pedestal; cleaning the processing chamber for afourth period of time of between about 180 seconds to about 190 secondswhile introducing argon at a rate of between about 150 sccm/L and about160 sccm/L while about 0.4 W/cm² to about 4.0 W/cm² of power isdelivered to the pedestal to remove material from the pedestal; andcleaning the processing chamber for a fifth period of time of betweenabout 180 seconds and about 190 seconds while introducing argon at arate of between about 50 sccm/L to about 60 sccm/L while about 0.4 W/cm²to about 4.0 W/cm² of power is delivered to the pedestal to removematerial from the pedestal.
 11. The method of claim 10, furthercomprising repeating the cleaning the processing chamber for the first,second, third, fourth and fifth times.
 12. The method of claim 11,further comprising permitting the chamber to remain idle for a period oftime of about 4 minutes to about 6 minutes prior to the repeating. 13.The method of claim 1, further comprising coupling the sputtering targetto the processing chamber after the removing material from the pedestalto clean the pedestal.
 14. The method of claim 6, further comprisingcoupling the sputtering target to the processing chamber after thecleaning the processing chamber for the third period of time.
 15. Themethod of claim 10, further comprising coupling the sputtering target tothe processing chamber after the cleaning the processing chamber for thefifth period of time.